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Journal: Micromachines, 2025
Volume: 16
Number: 105

Article: Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth
Authors: by Jiyao Du, Taofei Pu, Xiaobo Li, Liuan Li, Jinping Ao and Hongwei Gao
Link: https://www.mdpi.com/2072-666X/16/1/105

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