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Journal: Micromachines, 2024
Volume: 15
Number: 1060
1060
Article: Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability
Authors: by Xuesong Zheng, Yifan Wu, Haitao Dong, Yizhi Liu, Pengpeng Sang, Liyi Xiao and Xuepeng Zhan
Link: https://www.mdpi.com/2072-666X/15/9/1060

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