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Journal: MicromachinesVolume: 15Number: 1060
Article: Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability
  • Authors:
  • Xuesong Zheng1,2,†,
  • Yifan Wu3,† and
  • Haitao Dong3
  • et al.
Link: https://www.mdpi.com/2072-666X/15/9/1060

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