Li, X.; Shao, Y.; Wang, Y.; Liu, F.; Kuang, F.; Zhuang, Y.; Li, C.
Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors. Micromachines 2024, 15, 420.
https://doi.org/10.3390/mi15030420
AMA Style
Li X, Shao Y, Wang Y, Liu F, Kuang F, Zhuang Y, Li C.
Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors. Micromachines. 2024; 15(3):420.
https://doi.org/10.3390/mi15030420
Chicago/Turabian Style
Li, Xiaoming, Yali Shao, Yunqi Wang, Fang Liu, Fengyu Kuang, Yiqi Zhuang, and Cong Li.
2024. "Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors" Micromachines 15, no. 3: 420.
https://doi.org/10.3390/mi15030420
APA Style
Li, X., Shao, Y., Wang, Y., Liu, F., Kuang, F., Zhuang, Y., & Li, C.
(2024). Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors. Micromachines, 15(3), 420.
https://doi.org/10.3390/mi15030420