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Journal: Micromachines, 2024
Volume: 15
Number: 1220
1220
Article: Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer
Authors: by Qian Yu, Chunzhou Shi, Ling Yang, Hao Lu, Meng Zhang, Xu Zou, Mei Wu, Bin Hou, Wenze Gao, Sheng Wu, Xiaohua Ma and Yue Hao
Link: https://www.mdpi.com/2072-666X/15/10/1220

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