Oh, S.Y.; Jeong, Y.J.; Kang, I.; Park, J.-H.; Yeom, M.J.; Jeon, D.-W.; Yoo, G.
A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact. Micromachines 2024, 15, 133.
https://doi.org/10.3390/mi15010133
AMA Style
Oh SY, Jeong YJ, Kang I, Park J-H, Yeom MJ, Jeon D-W, Yoo G.
A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact. Micromachines. 2024; 15(1):133.
https://doi.org/10.3390/mi15010133
Chicago/Turabian Style
Oh, Seung Yoon, Yeong Je Jeong, Inho Kang, Ji-Hyeon Park, Min Jae Yeom, Dae-Woo Jeon, and Geonwook Yoo.
2024. "A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact" Micromachines 15, no. 1: 133.
https://doi.org/10.3390/mi15010133
APA Style
Oh, S. Y., Jeong, Y. J., Kang, I., Park, J.-H., Yeom, M. J., Jeon, D.-W., & Yoo, G.
(2024). A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact. Micromachines, 15(1), 133.
https://doi.org/10.3390/mi15010133