Article Versions Notes

Liu A-C, Tu P-T, Chen H-C, Lai Y-Y, Yeh P-C, Kuo H-C. Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications. Micromachines. 2023; 14(8):1582. https://doi.org/10.3390/mi14081582

Liu, An-Chen, Po-Tsung Tu, Hsin-Chu Chen, Yung-Yu Lai, Po-Chun Yeh, and Hao-Chung Kuo. 2023. "Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications" Micromachines 14, no. 8: 1582. https://doi.org/10.3390/mi14081582

Liu, A.-C., Tu, P.-T., Chen, H.-C., Lai, Y.-Y., Yeh, P.-C., & Kuo, H.-C. (2023). Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications. Micromachines, 14(8), 1582. https://doi.org/10.3390/mi14081582