Liu, H.; Li, P.; Zhou, X.; Wang, P.; Li, Y.; Pan, L.; Zhang, W.; Li, Y.
A High-Performance InGaAs Vertical Electron–Hole Bilayer Tunnel Field Effect Transistor with P+-Pocket and InAlAs-Block. Micromachines 2023, 14, 2049.
https://doi.org/10.3390/mi14112049
AMA Style
Liu H, Li P, Zhou X, Wang P, Li Y, Pan L, Zhang W, Li Y.
A High-Performance InGaAs Vertical Electron–Hole Bilayer Tunnel Field Effect Transistor with P+-Pocket and InAlAs-Block. Micromachines. 2023; 14(11):2049.
https://doi.org/10.3390/mi14112049
Chicago/Turabian Style
Liu, Hu, Peifeng Li, Xiaoyu Zhou, Pengyu Wang, Yubin Li, Lei Pan, Wenting Zhang, and Yao Li.
2023. "A High-Performance InGaAs Vertical Electron–Hole Bilayer Tunnel Field Effect Transistor with P+-Pocket and InAlAs-Block" Micromachines 14, no. 11: 2049.
https://doi.org/10.3390/mi14112049
APA Style
Liu, H., Li, P., Zhou, X., Wang, P., Li, Y., Pan, L., Zhang, W., & Li, Y.
(2023). A High-Performance InGaAs Vertical Electron–Hole Bilayer Tunnel Field Effect Transistor with P+-Pocket and InAlAs-Block. Micromachines, 14(11), 2049.
https://doi.org/10.3390/mi14112049