Order Article Reprints

Wang Z, Cao Y, Zhang X, Chen C, Wu L, Ma M, Lv H, Lv L, Zheng X, Tian W, et al. Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor. Micromachines. 2023; 14(10):1948. https://doi.org/10.3390/mi14101948

Wang, Zhiheng, Yanrong Cao, Xinxiang Zhang, Chuan Chen, Linshan Wu, Maodan Ma, Hanghang Lv, Ling Lv, Xuefeng Zheng, Wenchao Tian, and et al. 2023. "Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor" Micromachines 14, no. 10: 1948. https://doi.org/10.3390/mi14101948

Wang, Z., Cao, Y., Zhang, X., Chen, C., Wu, L., Ma, M., Lv, H., Lv, L., Zheng, X., Tian, W., Ma, X., & Hao, Y. (2023). Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor. Micromachines, 14(10), 1948. https://doi.org/10.3390/mi14101948