Yang, T.; Xia, Z.; Fan, D.; Zhao, D.; Xie, W.; Yang, Y.; Liu, L.; Zhou, W.; Huo, Z.
Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash. Micromachines 2023, 14, 230.
https://doi.org/10.3390/mi14010230
AMA Style
Yang T, Xia Z, Fan D, Zhao D, Xie W, Yang Y, Liu L, Zhou W, Huo Z.
Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash. Micromachines. 2023; 14(1):230.
https://doi.org/10.3390/mi14010230
Chicago/Turabian Style
Yang, Tao, Zhiliang Xia, Dongyu Fan, Dongxue Zhao, Wei Xie, Yuancheng Yang, Lei Liu, Wenxi Zhou, and Zongliang Huo.
2023. "Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash" Micromachines 14, no. 1: 230.
https://doi.org/10.3390/mi14010230
APA Style
Yang, T., Xia, Z., Fan, D., Zhao, D., Xie, W., Yang, Y., Liu, L., Zhou, W., & Huo, Z.
(2023). Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash. Micromachines, 14(1), 230.
https://doi.org/10.3390/mi14010230
