Casu, C.; Buffolo, M.; Caria, A.; De Santi, C.; Zanoni, E.; Meneghesso, G.; Meneghini, M.
Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode. Micromachines 2022, 13, 1266.
https://doi.org/10.3390/mi13081266
AMA Style
Casu C, Buffolo M, Caria A, De Santi C, Zanoni E, Meneghesso G, Meneghini M.
Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode. Micromachines. 2022; 13(8):1266.
https://doi.org/10.3390/mi13081266
Chicago/Turabian Style
Casu, Claudia, Matteo Buffolo, Alessandro Caria, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso, and Matteo Meneghini.
2022. "Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode" Micromachines 13, no. 8: 1266.
https://doi.org/10.3390/mi13081266
APA Style
Casu, C., Buffolo, M., Caria, A., De Santi, C., Zanoni, E., Meneghesso, G., & Meneghini, M.
(2022). Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode. Micromachines, 13(8), 1266.
https://doi.org/10.3390/mi13081266
