Order Article Reprints

Chen K, Yang J, Liu T, Wang D, Xu M, Wu C, Wang C, Xu S, Zhang DW, Liu W. Source/Drain Trimming Process to Improve Gate-All-Around Nanosheet Transistors Switching Performance and Enable More Stacks of Nanosheets. Micromachines. 2022; 13(7):1080. https://doi.org/10.3390/mi13071080

Chen, Kun, Jingwen Yang, Tao Liu, Dawei Wang, Min Xu, Chunlei Wu, Chen Wang, Saisheng Xu, David Wei Zhang, and Wenchao Liu. 2022. "Source/Drain Trimming Process to Improve Gate-All-Around Nanosheet Transistors Switching Performance and Enable More Stacks of Nanosheets" Micromachines 13, no. 7: 1080. https://doi.org/10.3390/mi13071080

Chen, K., Yang, J., Liu, T., Wang, D., Xu, M., Wu, C., Wang, C., Xu, S., Zhang, D. W., & Liu, W. (2022). Source/Drain Trimming Process to Improve Gate-All-Around Nanosheet Transistors Switching Performance and Enable More Stacks of Nanosheets. Micromachines, 13(7), 1080. https://doi.org/10.3390/mi13071080