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Journal: Micromachines, 2022
Volume: 13
Number: 248

Article: SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss
Authors: by Shenglong Ran, Zhiyong Huang, Shengdong Hu and Han Yang
Link: https://www.mdpi.com/2072-666X/13/2/248

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