Chen, Z.; Song, R.; Huo, Q.; Ren, Q.; Zhang, C.; Li, L.; Zhang, F.
Analysis of Leakage Current of HfO2/TaOx-Based 3-D Vertical Resistive Random Access Memory Array. Micromachines 2021, 12, 614.
https://doi.org/10.3390/mi12060614
AMA Style
Chen Z, Song R, Huo Q, Ren Q, Zhang C, Li L, Zhang F.
Analysis of Leakage Current of HfO2/TaOx-Based 3-D Vertical Resistive Random Access Memory Array. Micromachines. 2021; 12(6):614.
https://doi.org/10.3390/mi12060614
Chicago/Turabian Style
Chen, Zhisheng, Renjun Song, Qiang Huo, Qirui Ren, Chenrui Zhang, Linan Li, and Feng Zhang.
2021. "Analysis of Leakage Current of HfO2/TaOx-Based 3-D Vertical Resistive Random Access Memory Array" Micromachines 12, no. 6: 614.
https://doi.org/10.3390/mi12060614
APA Style
Chen, Z., Song, R., Huo, Q., Ren, Q., Zhang, C., Li, L., & Zhang, F.
(2021). Analysis of Leakage Current of HfO2/TaOx-Based 3-D Vertical Resistive Random Access Memory Array. Micromachines, 12(6), 614.
https://doi.org/10.3390/mi12060614