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Journal: Micromachines, 2021
Volume: 12
Number: 1284
Article:
Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT
Authors:
by
Abdelkrim Khediri, Abbasia Talbi, Abdelatif Jaouad, Hassan Maher and Ali Soltani
Link:
https://www.mdpi.com/2072-666X/12/11/1284
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