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Open AccessArticle

Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C

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Institute of Chemistry, Technology and Metallurgy-Centre for Microelectronic Technologies (IHTM-CMT), University of Belgrade, Njegoševa 12, 11000 Belgrade, Serbia
2
Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia
*
Author to whom correspondence should be addressed.
Micromachines 2020, 11(3), 253; https://doi.org/10.3390/mi11030253
Received: 30 January 2020 / Accepted: 21 February 2020 / Published: 27 February 2020
(This article belongs to the Special Issue MEMS/NEMS Sensors: Fabrication and Application, Volume II)
This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations. View Full-Text
Keywords: no convex corner compensation; parallelogram; silicon; wet etching; tetramethylammonium hydroxide (TMAH) no convex corner compensation; parallelogram; silicon; wet etching; tetramethylammonium hydroxide (TMAH)
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MDPI and ACS Style

Smiljanić, M.M.; Lazić, Ž.; Jović, V.; Radjenović, B.; Radmilović-Radjenović, M. Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C. Micromachines 2020, 11, 253.

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