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Open AccessArticle

Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography

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Université de Sherbrooke, Laboratoire Nanotechnologies Nanosystèmes (LN2)–CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT), Sherbrooke, QC J1K OA5, Canada
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King Saud University, Department of Physics & Astronomy, College of Sciences, Riyadh 11451, Saudi Arabia
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Author to whom correspondence should be addressed.
Academic Editor: Jose Luis Capelo
Materials 2016, 9(7), 511; https://doi.org/10.3390/ma9070511
Received: 1 April 2016 / Revised: 26 May 2016 / Accepted: 17 June 2016 / Published: 24 June 2016
We report on Chemical Beam Epitaxy (CBE) growth of wavelength tunable InAs/GaAs quantum dots (QD) based superluminescent diode’s active layer suitable for Optical Coherence Tomography (OCT). The In-flush technique has been employed to fabricate QD with controllable heights, from 5 nm down to 2 nm, allowing a tunable emission band over 160 nm. The emission wavelength blueshift has been ensured by reducing both dots’ height and composition. A structure containing four vertically stacked height-engineered QDs have been fabricated, showing a room temperature broad emission band centered at 1.1 µm. The buried QD layers remain insensitive to the In-flush process of the subsequent layers, testifying the reliability of the process for broadband light sources required for high axial resolution OCT imaging. View Full-Text
Keywords: InAs quantum dots; In-flush; chemical beam epitaxy; SLD; OCT InAs quantum dots; In-flush; chemical beam epitaxy; SLD; OCT
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MDPI and ACS Style

Ilahi, B.; Zribi, J.; Guillotte, M.; Arès, R.; Aimez, V.; Morris, D. Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography. Materials 2016, 9, 511.

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