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Study of Charge Carrier Transport in GaN Sensors

Institute of Applied Research, Vilnius University, Sauletekio Ave. 9-III, Vilnius 10222, Lithuania
Author to whom correspondence should be addressed.
Academic Editor: Dusan Losic
Materials 2016, 9(4), 293;
Received: 17 February 2016 / Revised: 14 March 2016 / Accepted: 12 April 2016 / Published: 18 April 2016
Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE) GaN material have been estimated as μe = 1000 ± 200 cm2/Vs for electrons, and μh = 400 ± 80 cm2/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects. View Full-Text
Keywords: materials for solid-state detectors; models and simulations; charge transport; polarization materials for solid-state detectors; models and simulations; charge transport; polarization
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Gaubas, E.; Ceponis, T.; Kuokstis, E.; Meskauskaite, D.; Pavlov, J.; Reklaitis, I. Study of Charge Carrier Transport in GaN Sensors. Materials 2016, 9, 293.

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