Next Article in Journal
Synthesis and Characterization of Poly(Ethylene Glycol) Based Thermo-Responsive Hydrogels for Cell Sheet Engineering
Next Article in Special Issue
Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film
Previous Article in Journal
Porous Alpha-Tricalcium Phosphate with Immobilized Basic Fibroblast Growth Factor Enhances Bone Regeneration in a Canine Mandibular Bone Defect Model
Open AccessArticle

Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

1
Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea
2
Department of Advanced Materials Engineering for Information & Electronics, Kyung Hee University, Yongin 17104, Korea
*
Author to whom correspondence should be addressed.
Academic Editor: Pedro Barquinha
Materials 2016, 9(10), 851; https://doi.org/10.3390/ma9100851
Received: 8 September 2016 / Revised: 12 October 2016 / Accepted: 13 October 2016 / Published: 19 October 2016
(This article belongs to the Special Issue Oxide Semiconductor Thin-Film Transistor)
We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites. View Full-Text
Keywords: solution process; oxide semiconductor; thin-film transistor; surface morphology solution process; oxide semiconductor; thin-film transistor; surface morphology
Show Figures

Figure 1

MDPI and ACS Style

Lee, H.; Zhang, X.; Hwang, J.; Park, J. Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors. Materials 2016, 9, 851. https://doi.org/10.3390/ma9100851

AMA Style

Lee H, Zhang X, Hwang J, Park J. Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors. Materials. 2016; 9(10):851. https://doi.org/10.3390/ma9100851

Chicago/Turabian Style

Lee, Hyeonju; Zhang, Xue; Hwang, Jaeeun; Park, Jaehoon. 2016. "Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors" Materials 9, no. 10: 851. https://doi.org/10.3390/ma9100851

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop