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Materials 2015, 8(8), 5289-5297;

Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO2x Thin Films

Department of Materials Science and Engineering, National Cheng Kung University, No. 1, University Road, Tainan 701, Taiwan
Department of Electrical Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung 833, Taiwan
Amity Institute of Nanotechnology, Amity University, Sector 125, Noida, India
Department of Chemical and Materials Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Road, Nan-Tzu District, Kaohsiung 811, Taiwan
Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan
Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan
These authors contributed equally to this work.
Author to whom correspondence should be addressed.
Academic Editor: Teen-Hang Meen
Received: 30 June 2015 / Revised: 5 August 2015 / Accepted: 6 August 2015 / Published: 14 August 2015
(This article belongs to the Special Issue Selected Papers from ICASI 2015)
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Tin oxide (SnO2—x) thin films were prepared under various flow ratios of O2/(O2 + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O2/(O2 + Ar), chamber pressures and post-annealing treatment on the physical properties of SnO2 thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM). Auger electron spectroscopy (AES) analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor. View Full-Text
Keywords: SnO2; transparent conductive oxide (TCO); oxygen flow ratio; annealing SnO2; transparent conductive oxide (TCO); oxygen flow ratio; annealing

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Wang, C.-M.; Huang, C.-C.; Kuo, J.-C.; Sahu, D.R.; Huang, J.-L. Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO2x Thin Films. Materials 2015, 8, 5289-5297.

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