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Materials 2015, 8(3), 1176-1186;

Preparation and Electrical Properties of La0.9Sr0.1TiO3+δ

1,2,* and 1,2
School of Material Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
National Key Laboratory of Science and Technology on Materials under Shock and Impact, Beijing 100081, China
Author to whom correspondence should be addressed.
Academic Editor: Marco Salerno
Received: 13 December 2014 / Revised: 8 February 2015 / Accepted: 9 February 2015 / Published: 17 March 2015
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La1xSrxTiO3+δ (LST) has been studied in many fields, especially in the field of microelectronics due to its excellent electrical performance. Our previous theoretical simulated work has suggested that LST has good dielectric properties, but there are rare reports about this, especially experimental reports. In this paper, LST was prepared using a solid-state reaction method. The X-rays diffraction (XRD), scanning electron microscope (SEM), broadband dielectric spectroscopy, impedance spectroscopy and photoconductive measurement were used to characterize the sample. The results show that the values of dielectric parameters (the relative dielectric constant εr and dielectric loss tanδ), dependent on temperature, are stable under 350 °C and the value of the relative dielectric constant and dielectric loss are about 52–88 and 6.5 × 10−3, respectively. Its value of conductivity increases with rise in temperature, which suggests its negative temperature coefficient of the resistance. In addition, the band gap of LST is about 3.39 eV, so it belongs to a kind of wide-band-gap semiconductor materials. All these indicate that LST has anti-interference ability and good dielectric properties. It could have potential applications as an electronic material. View Full-Text
Keywords: La0.9Sr0.1TiO3+δ; dielectric properties; conductivity; band gap La0.9Sr0.1TiO3+δ; dielectric properties; conductivity; band gap

Figure 1

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Li, W.; Ma, Z.; Gao, L.; Wang, F. Preparation and Electrical Properties of La0.9Sr0.1TiO3+δ. Materials 2015, 8, 1176-1186.

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