Order Article Reprints

Lu Q, Mu Y, Roberts JW, Althobaiti M, Dhanak VR, Wu J, Zhao C, Zhao CZ, Zhang Q, Yang L, et al. Electrical Properties and Interfacial Studies of Hf_xTi_1–xO₂ High Permittivity Gate Insulators Deposited on Germanium Substrates. Materials. 2015; 8(12):8169-8182. https://doi.org/10.3390/ma8125454

Lu, Qifeng, Yifei Mu, Joseph W. Roberts, Mohammed Althobaiti, Vinod R. Dhanak, Jingjin Wu, Chun Zhao, Ce Zhou Zhao, Qian Zhang, Li Yang, and et al. 2015. "Electrical Properties and Interfacial Studies of Hf_xTi_1–xO₂ High Permittivity Gate Insulators Deposited on Germanium Substrates" Materials 8, no. 12: 8169-8182. https://doi.org/10.3390/ma8125454

Lu, Q., Mu, Y., Roberts, J. W., Althobaiti, M., Dhanak, V. R., Wu, J., Zhao, C., Zhao, C. Z., Zhang, Q., Yang, L., Mitrovic, I. Z., Taylor, S., & Chalker, P. R. (2015). Electrical Properties and Interfacial Studies of Hf_xTi_1–xO₂ High Permittivity Gate Insulators Deposited on Germanium Substrates. Materials, 8(12), 8169-8182. https://doi.org/10.3390/ma8125454