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Open AccessArticle

Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory

1
Department of Electrical Engineering, Institute of Microelectronics, Advanced Optoelectronic Technology Center, National Cheng-Kung University, Tainan 701, Taiwan
2
Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Teen-Hang Meen
Materials 2015, 8(10), 7191-7198; https://doi.org/10.3390/ma8105374
Received: 30 August 2015 / Revised: 11 October 2015 / Accepted: 19 October 2015 / Published: 26 October 2015
(This article belongs to the Special Issue Selected Papers from ICASI 2015)
Strontium titanate nickelate (STN) thin films on indium tin oxide (ITO)/glass substrate were synthesized using the sol-gel method for resistive random access memory (RRAM) applications. Aluminum (Al), titanium (Ti), tungsten (W), gold (Au) and platinum (Pt) were used as top electrodes in the STN-based RRAM to probe the switching behavior. The bipolar resistive switching behavior of the set and reset voltages is in opposite bias in the Al/STN/ITO and Pt/STN/ITO RRAMs, which can be partly ascribed to the different work functions of top electrodes in the ITO. Analyses of the fitting results and temperature-dependent performances showed that the Al/STN/ITO switching was mainly attributed to the absorption/release of oxygen-based functional groups, whereas the Pt/STN/ITO switching can be associated with the diffusion of metal electrode ions. The Al/STN/ITO RRAM demonstrated a high resistance ratio of >106 between the high-resistance state (HRS) and the low-resistance state (LRS), as well as a retention ability of >105 s. Furthermore, the Pt/STN/ITO RRAM displayed a HRS/LRS resistance ratio of >103 and a retention ability of >105 s. View Full-Text
Keywords: sol-gel; resistive random access memory; strontium titanate nickelate sol-gel; resistive random access memory; strontium titanate nickelate
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Lee, K.-J.; Wang, L.-W.; Chiang, T.-K.; Wang, Y.-H. Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory. Materials 2015, 8, 7191-7198.

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