Next Article in Journal / Special Issue
Improving Efficiency of Multicrystalline Silicon and CIGS Solar Cells by Incorporating Metal Nanoparticles
Previous Article in Journal
Influence of Fiber Orientation on Single-Point Cutting Fracture Behavior of Carbon-Fiber/Epoxy Prepreg Sheets
Previous Article in Special Issue
Performance-Enhanced Textured Silicon Solar Cells Based on Plasmonic Light Scattering Using Silver and Indium Nanoparticles
Open AccessArticle

Effect of Annealing Process on the Properties of Ni(55%)Cr(40%)Si(5%) Thin-Film Resistors

Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 804, Taiwan
Department of Chemical and Materials Engineering, National University of Kaohsiung, No. 700 Kaohsiung University Road, Nan-Tzu District, Kaohsiung 811, Taiwan
Department of Electrical Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan
Author to whom correspondence should be addressed.
Academic Editor: Teen-Hang Meen
Materials 2015, 8(10), 6752-6760;
Received: 12 August 2015 / Revised: 11 September 2015 / Accepted: 22 September 2015 / Published: 2 October 2015
(This article belongs to the Special Issue Selected Papers from ICASI 2015)
Resistors in integrated circuits (ICs) are implemented using diffused methods fabricated in the base and emitter regions of bipolar transistor or in source/drain regions of CMOS. Deposition of thin films on the wafer surface is another choice to fabricate the thin-film resistors in ICs’ applications. In this study, Ni(55%)Cr(40%)Si(5%) (abbreviated as NiCrSi) in wt % was used as the target and the sputtering method was used to deposit the thin-film resistors on Al2O3 substrates. NiCrSi thin-film resistors with different thicknesses of 30.8 nm~334.7 nm were obtained by controlling deposition time. After deposition, the thin-film resistors were annealed at 400 °C under different durations in N2 atmosphere using the rapid thermal annealing (RTA) process. The sheet resistance of NiCrSi thin-film resistors was measured using the four-point-probe method from 25 °C to 125 °C, then the temperature coefficient of resistance could be obtained. We aim to show that resistivity of NiCrSi thin-film resistors decreased with increasing deposition time (thickness) and the annealing process had apparent effect on the sheet resistance and temperature coefficient of resistance. We also aim to show that the annealed NiCrSi thin-film resistors had a low temperature coefficient of resistance (TCR) between 0 ppm/°C and +50 ppm/°C. View Full-Text
Keywords: Ni(55%)Cr(40%)Si(5%); thin-film resistor; deposition time; rapid thermal annealing Ni(55%)Cr(40%)Si(5%); thin-film resistor; deposition time; rapid thermal annealing
Show Figures

Figure 1

MDPI and ACS Style

Cheng, H.-Y.; Chen, Y.-C.; Li, P.-J.; Yang, C.-F.; Huang, H.-H. Effect of Annealing Process on the Properties of Ni(55%)Cr(40%)Si(5%) Thin-Film Resistors. Materials 2015, 8, 6752-6760.

Show more citation formats Show less citations formats

Article Access Map by Country/Region

Only visits after 24 November 2015 are recorded.
Back to TopTop