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Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

1,†, 2,†, 1,†, 1, 2, 3,*, 4,* and 1,2
Department of Physics, National Taiwan University, Taipei 10617, Taiwan
Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan
National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
Authors to whom correspondence should be addressed.
These authors contributed equally to this work.
Academic Editor: Jan Ingo Flege
Materials 2015, 8(10), 7084-7093;
Received: 9 August 2015 / Revised: 25 September 2015 / Accepted: 12 October 2015 / Published: 19 October 2015
(This article belongs to the Special Issue Epitaxial Materials 2015)
PDF [1926 KB, uploaded 19 October 2015]


Single-crystal atomic-layer-deposited (ALD) Y\(_{\mathrm{2}}\)O\(_{\mathrm{3}}\) films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 \(\times\) 6 and GaAs(111)A-2 \(\times\) 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using \textit{in-situ} reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001), the Y\(_{\mathrm{2}}\)O\(_{\mathrm{3}}\) films are of a cubic phase and have (110) as the film normal, with the orientation relationship being determined: Y\(_{\mathrm{2}}\)O\(_{\mathrm{3}}\)(\(110\))[\(001\)][\(\overline{1}10\)]//GaAs(\(001\))[\(110\)][\(1\overline{1}0\)]. On GaAs(\(111\))A, the Y\(_{\mathrm{2}}\)O\(_{\mathrm{3}}\) films are also of a cubic phase with (\(111\)) as the film normal, having the orientation relationship of Y\(_{\mathrm{2}}\)O\(_{\mathrm{3}}\)(\(111\))[\(2\overline{1}\overline{1}\)] [\(01\overline{1}\)]//GaAs (\(111\)) [\(\overline{2}11\)][\(0\overline{1}1\)]. The relevant orientation for the present/future integrated circuit platform is (\(001\)). The ALD-Y\(_{\mathrm{2}}\)O\(_{\mathrm{3}}\)/GaAs(\(001\))-4 \(\times\) 6 has shown excellent electrical properties. These include small frequency dispersion in the capacitance-voltage CV curves at accumulation of ~7% and ~14% for the respective p- and n-type samples with the measured frequencies of 1 MHz to 100 Hz. The interfacial trap density (Dit) is low of ~10\(^{12}\) cm\(^{−2}\)eV\(^{−1}\) as extracted from measured quasi-static CVs. The frequency dispersion at accumulation and the D\(_{it}\) are the lowest ever achieved among all the ALD-oxides on GaAs(\(001\)). View Full-Text
Keywords: atomic layer deposition; single crystal; epitaxial; molecular beam epitaxy; (001) and (111) orientations; interfacial trap density atomic layer deposition; single crystal; epitaxial; molecular beam epitaxy; (001) and (111) orientations; interfacial trap density

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Lin, Y.H.; Cheng, C.K.; Chen, K.H.; Fu, C.H.; Chang, T.W.; Hsu, C.H.; Kwo, J.; Hong, M. Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition. Materials 2015, 8, 7084-7093.

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