Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications
Abstract
:1. Introduction
2. Growth of Ferroelectric Thin Films
2.1. Thin Film Growth Physics
2.2. The Choice of Substrates
Lattice Constants (Å) | Perovskite-Related Substrates | Ferroelectric Thin Films | |
---|---|---|---|
3.70–3.80 | YAlO3 | – | |
LaSrAlO4 | |||
LaAlO3 | |||
3.80–3.90 | LaSrGaO4 | Bi4Ti3O12 | |
NdGaO3 | – | ||
LSAT | – | ||
LaGaO3 | – | ||
3.90–4.00 | SrTiO3 | SrBi2Ta2O9 | (Ba,Sr)TiO3 |
DyScO3 | BiMnO3 | ||
GdScO3 | BiFeO3 | ||
SmScO3 | PbTiO3 | ||
KTaO3 | |||
4.00–4.10 | NdScO3 | BaTiO3 | Pb(Zr,Ti)O3 |
– | PMN-PT | ||
4.10–4.20 | – | Pb(Zr,Ti)O3 |
2.3. Evaporation Methods
2.3.1. Vacuum Evaporation
2.3.2. Pulsed Laser Deposition
2.3.3. Molecular Beam Epitaxy
2.4. Sputtering Method
2.5. Chemical Deposition Methods
2.5.1. Chemical Solution Deposition
2.5.2. Chemical Vapor Deposition
2.5.3. Other Chemical Methods
Characterization | Synthesis methods | ||||
---|---|---|---|---|---|
CSD (sol-gel) | MOCVD | Sputtering | PLD | ALD | |
Stoichiometric ratio | better | better | ordinary | good | better |
Doping difficulties | easy | easy | hard | hard | easy |
Precursor obtained | easy | easy | easier | easier | ordinary |
Adhesion to substrates | good | good | better | good | better |
Growth rate | low | high | high | high | lower |
Epitaxial ability | strong | weak | strong | stronger | strongest |
Uniformity | better | better | good | good | best |
Thickness control | hard | easy | easy | easy | best |
Surface morphology | ordinary | better | good | good | best |
Repeatability | better | better | ordinary | good | better |
Suitable for large-scare preparation | ordinarily | better | good | no | better |
Compatibility for heterostructures/superlattices formation | ordinary | good | good | better | best |
Applicability in ferroelectric film preparation | Almost suitable for all of the perovskite compounds | Not suitable for films containing elements with high atomic number such as Ba,Sr, Bi, Pb, etc. | Restrict to compounds containing volatile heavy elements like PZT | Almost suitable for all of the perovskite compounds besides those cannot be fabricated into PLD targets | Suitable precursors and substrates with appropriate chemical properties are needed for surface chemisorptions |
2.6. Ferroelectric Thin Film Heterostructures
3. Characterization of Ferroelectric Thin Films
3.1. Material Characterizations
3.1.1. Composition and Structure
3.1.2. Surface Information
Techniques | Characterizing applications | Primary beam | Secondary signal | |
---|---|---|---|---|
XRD | Crystal composition and structure | Photon (>1 keV) | X-ray | |
TEM | High-resolution structure | Electron (100–400 keV) | Electron | |
SEM | Surface morphology appropriate for tilted surface | Electron (0.3–30 keV) | Electron | |
SPM | STM | Surface morphology and manipulation for conductors or semiconductors at atomic scale | None (based on physical probe) | None (based on physical probe) |
AFM | Surface morphology appropriate for flat surface | |||
EDX/EDS | Surface region composition | Electron (1–30 keV) | X-ray | |
XPS | Quantitative surface composition | Photon (>1 keV) | Electron | |
AES | Quantitative surface layer composition in micro-region | Electron (500 eV–10 keV) | Electron | |
SIMS/TOF-SIMS | Trace composition vs depth | Ion (1–15 keV) | Ion | |
RHEED | Surface structure | Electron (30–50 keV) | Electron | |
LEED | Surface structure | Electron (20–200 eV) | Electron | |
HAS | Surface structure and lattice dynamics | Monochromatic helium beam | Diffracted atoms | |
Raman spectrometer | Composition and molecular structure within Raman active mode | Optical wave | Optical signals | |
IR/FTIR | Composition and molecular structure within IR active mode | |||
PL | Electron structure, band gap, impurity grade, defects, atomic arrangement | |||
CL | Similar to PL, special at micro-zone analysis (<1 μm range) | |||
Spec Ellipsometer | Film thickness, optical properties, sample roughness on surface/interfaces |
3.2. Property Characterizations
3.2.1. Polarization Switching and Hysteresis Loop
3.2.2. Domain Structure
3.2.3. Transport Properties
3.2.4. Dielectric Permittivity
3.2.5. Mechanical Properties
3.2.6. Thermal Properties
4. Important Phenomena in Ferroelectric Thin Films
4.1. Ferroelectricity and Critical Thickness
4.1.1. Effect of Substrate Misfit Strain and Structural Defects
4.1.2. Effects of Electrodes
4.2. Electromechanical Behavior
4.2.1. Piezoelectric Effect
4.2.2. Flexoelectric Effect
4.3. Domain Structure
4.3.1. Domain Structure Evolution
4.3.2. Domain and Domain Wall Mediated Properties
4.4. Electronic Transport in Ferroelectric Thin Films
4.4.1. Giant Tunnel Electroresistance Effect
4.4.2. Photoelectric and Photodiode Effect
4.4.3. Effect of Mechanical Load: Giant Piezoelectric Resistance Effect
4.4.4. Domain Wall Conduction
4.4.5. Resistive Switching
4.5. Ferroelectric Fatigue
5. Applications
5.1. Applications in Memory Devices
5.1.1. Ferroelectric Random Access Memory (FRAM)
5.1.2. Resistive Random Access Memory (RRAM)
5.2. Piezoelectric and Integrated MEMS
5.3. Surface Acoustic Wave (SAW) Devices
5.4. Application in Integrated Optics and Electrooptic Devices
5.4.1. Electrooptic Waveguide Modulators
5.4.2. Electrooptic Switch
5.5. Tunable Microwave Devices
5.6. Applications Based on Pyroelectric and Electrocaloric Effects
5.7. Prospective Applications of Ultrathin Ferroelectric Films
6. Outlook and Summary
Acknowledgments
Author Contributions
Conflicts of Interest
References
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Wang, Y.; Chen, W.; Wang, B.; Zheng, Y. Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications. Materials 2014, 7, 6377-6485. https://doi.org/10.3390/ma7096377
Wang Y, Chen W, Wang B, Zheng Y. Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications. Materials. 2014; 7(9):6377-6485. https://doi.org/10.3390/ma7096377
Chicago/Turabian StyleWang, Ying, Weijin Chen, Biao Wang, and Yue Zheng. 2014. "Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications" Materials 7, no. 9: 6377-6485. https://doi.org/10.3390/ma7096377