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Materials 2012, 5(12), 2917-2926;

Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

Key Laboratory of Instrumentation Science & Dynamic Measurement Ministry of Education, Taiyuan, Shanxi 030051, China
State Key Laboratory for Superlattices and Microstructures, Institute of semiconductors, Chinese Academy of Sciences, Beijing 100083, China
School of Mechatronic Engineering, Beijing Institute of Technology, 100081, China
Author to whom correspondence should be addressed.
Received: 24 October 2012 / Revised: 4 December 2012 / Accepted: 10 December 2012 / Published: 17 December 2012
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Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching superlattice and strain superlattice were used, and the surface defect density can be improved by two orders of magnitude. Combing with the Raman spectrum, the residual stress was characterized, and it can be concluded from the experimental results that the residual stress can be reduced by 50%, in comparison with the original substrate. This method gives us a solution to optimize the epitaxy GaAs layers on Si substrate, which will also optimize our future process of integration RTD and HEMT based on GaAs on Si substrate for the MEMS sensor applications. View Full-Text
Keywords: residual stress; GaAs-on-Si; MEMS sensors residual stress; GaAs-on-Si; MEMS sensors

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Shi, Y.; Guo, H.; Ni, H.; Xue, C.; Niu, Z.; Tang, J.; Liu, J.; Zhang, W.; He, J.; Li, M.; Yu, Y. Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application. Materials 2012, 5, 2917-2926.

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