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Mn-doped Ge and Si: A Review of the Experimental Status

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Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany
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State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, China
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Author to whom correspondence should be addressed.
Materials 2010, 3(12), 5054-5082; https://doi.org/10.3390/ma3125054
Received: 18 October 2010 / Revised: 16 November 2010 / Accepted: 19 November 2010 / Published: 26 November 2010
(This article belongs to the Special Issue Ferromagnetic Semiconductors)
Diluted ferromagnetic semiconductors (FMS) are in the focus of intense research due to their potential applications in spintronics and their striking new physical properties. So far Mn-doped III-V compound semiconductors such as GaMnAs are the most important and best understood ones, but they are ferromagnetic only at well below room temperature. An interesting alternative could be magnetic semiconductors based on elemental semiconductors, also owing to their compatibility with Si microelectronics. In the last decades, considerable amount of work has been devoted to fabricate Mn-doped Ge and Si FMS. In this article, the structural, magnetic and magneto-transport properties of Mn-doped Ge and Si will be reviewed. View Full-Text
Keywords: diluted ferromagnetic semiconductor diluted ferromagnetic semiconductor
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Zhou, S.; Schmidt, H. Mn-doped Ge and Si: A Review of the Experimental Status. Materials 2010, 3, 5054-5082.

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