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Open AccessCorrection

Correction: Pan, J.L. Progress to a Gallium-Arsenide Deep-Center Laser. Materials 2009, 2, 1599-1635

Yale University, P.O. Box 208284, New Haven, CT 06520-8284, USA
Materials 2009, 2(4), 1795; https://doi.org/10.3390/ma2041795
Received: 4 November 2009 / Published: 5 November 2009
Note: In lieu of an abstract, this is an excerpt from the first page.

The author acknowledges that her former graduate students, J. E. McManis and M. Gupta, collected the data in the recent review [1], as indicated by the references therein. [...] View Full-Text
MDPI and ACS Style

Pan, J.L. Correction: Pan, J.L. Progress to a Gallium-Arsenide Deep-Center Laser. Materials 2009, 2, 1599-1635. Materials 2009, 2, 1795.

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