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Journal: Materials, 2024
Volume: 17
Number: 1455
1455
Article: Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs
Authors: by Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Atsushi Shimbori, Hengyu Yu, Shiva Houshmand, Marvin H. White and Anant K. Agarwal
Link: https://www.mdpi.com/1996-1944/17/7/1455

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