Article Versions Notes

Liu L, Chen R, Kong C, Deng Z, Liu G, Yan J, Qin L, Du H, Song S, Zhang X, et al. Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy. Materials. 2024; 17(4):845. https://doi.org/10.3390/ma17040845

Liu, Linsheng, Ruolin Chen, Chongtao Kong, Zhen Deng, Guipeng Liu, Jianfeng Yan, Le Qin, Hao Du, Shuxiang Song, Xinhui Zhang, and et al. 2024. "Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy" Materials 17, no. 4: 845. https://doi.org/10.3390/ma17040845

Liu, L., Chen, R., Kong, C., Deng, Z., Liu, G., Yan, J., Qin, L., Du, H., Song, S., Zhang, X., & Wang, W. (2024). Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy. Materials, 17(4), 845. https://doi.org/10.3390/ma17040845