Jang, T.; Byeon, M.; Kang, M.; Lee, S.-G.; Lee, J.H.; Lee, S.-G.; Min, W.J.; Hong, T.E.
Investigating Structural and Surface Modifications in Ion-Implanted 4H-SiC for Enhanced Dopant Distribution Analysis in Power Semiconductors. Materials 2024, 17, 5734.
https://doi.org/10.3390/ma17235734
AMA Style
Jang T, Byeon M, Kang M, Lee S-G, Lee JH, Lee S-G, Min WJ, Hong TE.
Investigating Structural and Surface Modifications in Ion-Implanted 4H-SiC for Enhanced Dopant Distribution Analysis in Power Semiconductors. Materials. 2024; 17(23):5734.
https://doi.org/10.3390/ma17235734
Chicago/Turabian Style
Jang, Taehun, Mirang Byeon, Minji Kang, Sang-Gil Lee, Ji Hyun Lee, Sang-Geul Lee, Won Ja Min, and Tae Eun Hong.
2024. "Investigating Structural and Surface Modifications in Ion-Implanted 4H-SiC for Enhanced Dopant Distribution Analysis in Power Semiconductors" Materials 17, no. 23: 5734.
https://doi.org/10.3390/ma17235734
APA Style
Jang, T., Byeon, M., Kang, M., Lee, S.-G., Lee, J. H., Lee, S.-G., Min, W. J., & Hong, T. E.
(2024). Investigating Structural and Surface Modifications in Ion-Implanted 4H-SiC for Enhanced Dopant Distribution Analysis in Power Semiconductors. Materials, 17(23), 5734.
https://doi.org/10.3390/ma17235734
