Next Article in Journal
Charge-Controlled Energy Optimization of the Reconstruction of Semiconductor Surfaces: sp3sp2 Transformation of Stoichiometric GaN(0001) Surface to (4 × 4) Pattern
Previous Article in Journal
Deep Desulfurization of High-Sulfur Petroleum Coke via Alkali Catalytic Roasting Combined with Ultrasonic Oxidation
Previous Article in Special Issue
Cluster-Assisted Mesoplasma Chemical Vapor Deposition for Fast Epitaxial Growth of SiGe/Si Heterostructures: A Molecular Dynamics Simulation Study
 
 

Order Article Reprints

Journal: Materials, 2024
Volume: 17
Number: 2612

Article: Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth
Authors: by Shangyu Yang, Ning Guo, Siqi Zhao, Yunkai Li, Moyu Wei, Yang Zhang and Xingfang Liu
Link: https://www.mdpi.com/1996-1944/17/11/2612

MDPI offers high quality article reprints with convenient shipping to destinations worldwide. Each reprint features a 270 gsm bright white cover and 105 gsm premium white paper, bound with two stitches for durability and printed in full color. The cover design is customized to your article and designed to be complimentary to the journal.

Order Cost and Details

Shipping Address

Billing Address

Notes or Comments

Validate and Place Order

The order must be prepaid after it is placed

req denotes required fields.
Back to TopTop