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Journal: Materials, 2024
Volume: 17
Number: 167

Article: Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer
Authors: by Dong-Guang Zheng, Sangjin Min, Jiwon Kim and Dong-Pyo Han
Link: https://www.mdpi.com/1996-1944/17/1/167

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