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Journal: MaterialsVolume: 17Number: 167
Article: Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer
- Authors:
- Dong-Guang Zheng1,†,
- Sangjin Min2,† and
- Jiwon Kim2
- et al.
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