Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions
Abstract
:1. Introduction
2. Experiment
3. Results and Discussion
4. Conclusions
- Raman spectra show that defects produced by ion implantation are not completely recovered after high-temperature annealing at 1100 °C for 15 min. This is due to the bubbles formed during annealing, which retard the recovery of lattice damage. The increase in ion fluence leads to a decrease in crystallization peak intensity.
- Microstructure observation shows recrystallization during annealing at 1100 °C. In the damaged band, bubbles, dislocation loops and stacking faults are formed, similar to single He implantation. In comparison with single H2 or He implantation, an increase in bubble density but a decrease in bubble size in the He and H co-implantation is observed.
- Surface exfoliation is retarded by He and H2 co-implantation because He implantation-induced lattice defects inhibit the formation of micro-cracks in the damaged band.
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
- Wesch, W. Silicon carbide: Synthesis and processing. Nucl. Instrum. Methods Phys. Res. B 1996, 116, 305–321. [Google Scholar] [CrossRef]
- Jiao, Z.J.; Huang, H.G.; Liu, B.W.; Lin, J.J.; You, T.G.; Wang, S.M.; Gong, Q.; Gu, Y.; Ou, X.; Li, X. InAs triangular quantum wells grown on InP/SiO2/Si heterogeneous substrate for mid-infrared emission. Mater. Sci. Semi. Proc. 2021, 136, 106163. [Google Scholar] [CrossRef]
- Wang, C.L.; Yi, A.L.; Zheng, P.C.; Lin, J.J.; Shen, C.; Zhang, S.B.; Huang, K.; Zhao, X.M.; You, T.G.; Zhang, J.J.; et al. High yield preparation of flexible single-crystalline 4H-silicon carbide nanomembrances via buried micro-trenches. Opt. Mater. 2021, 115, 111068. [Google Scholar] [CrossRef]
- Bruel, M. Application of hydrogen ion beams to silicon on insulator material technology. Nucl. Instrum. Meth. Phys. Res. B 1996, 108, 313. [Google Scholar] [CrossRef]
- Herley, R.E.; Suder, S.; Gamble, H.S. Ion implantation of hydrogen and helium into silicon wafers for layer transfer in devices. Vacuum 2005, 78, 167. [Google Scholar] [CrossRef]
- Zhang, L.; Li, B.S. Study of surface exfoliation on 6H-SiC induced by H2+ implantation. Physical B 2017, 508, 104–111. [Google Scholar] [CrossRef]
- Wang, T.; Yang, Z.; Li, B.S.; Xu, S.; Liao, Q.; Ge, F.F.; Zhang, T.M.; Li, J. Lattice defects and exfoliation efficiency of 6H-SiC via H2+ implantation at elevated temperature. Materials 2020, 13, 5723. [Google Scholar] [CrossRef]
- Li, B.S.; Wang, Z.G. Structures and optical properties of H2+-implatned GaN epi-layers. J. Phys. D Appl. Phys. 2015, 48, 225101. [Google Scholar] [CrossRef] [Green Version]
- Radu, I.; Szafraniak-Wiza, I.; Scholz, R.; Alexe, M.; Gösele, U. GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding. J. Appl. Phys. 2003, 94, 7820. [Google Scholar] [CrossRef]
- Singh, R.; Scholz, R.; Gösele, U.; Christiansen, S.H. Narrow fluence window of hydrogen-implantation-induced exfoliation in ZnO. Semicond. Sci. Technol. 2007, 22, 1200. [Google Scholar]
- Daghbouj, N.; Li, B.S.; Karlik, M. Declemy, 6H-SiC blistering efficiency as a function of the hydrogen implantation fluence. Appl. Surf. Sci. 2018, 466, 141–150. [Google Scholar] [CrossRef]
- Tong, Q.Y.; Gutjahr, K.; Hopfe, S.; Gosele, U.; Lee, T.H. Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates. Appl. Phys. Lett. 1997, 70, 1390–1392. [Google Scholar] [CrossRef]
- Agarwal, A.; Haynes, T.E.; Venezia, V.C.; Holland, O.W.; Eaglesham, D.J. Efficient production of silicon-on-insulator films by co-implantation of He+ with H+. Appl. Phys. Lett. 1998, 72, 1086. [Google Scholar] [CrossRef]
- Weldon, M.K.; Collot, M.; Chabal, Y.J.; Venezia, V.C.; Agarwal, A.; Haynes, T.E.; Eaglesham, D.J.; Christman, S.B.; Chaban, E.E. Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation. Appl. Phys. Lett. 1998, 73, 3721. [Google Scholar] [CrossRef]
- Duo, X.Z.; Liu, W.L.; Zhang, M.; Wang, L.W.; Lin, C.L.; Okuyama, M.; Noda, M.; Cheung, W.Y.; Chu, P.L.; Hu, P.G.; et al. Comparison between the different implantation orders in H+ and He+ coimplantation. J. Phys. D: Appl. Phys. 2001, 34, 477. [Google Scholar] [CrossRef] [Green Version]
- Nguyen, P.; Cayredourcq, I.; Bourdelle, K.K.; Boussagol, A.; Guiot, E.; Mohamed, N.B.; Sousbie, N.; Akatsu, T. Mechanism of the smart cut layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range. J. Appl. Phys. 2005, 97, 083527. [Google Scholar] [CrossRef]
- Daghbouj, N.; Cherkashin, N.; Darras, F.X.; Paillard, V.; Fnaiech, M.; Claverie, A. Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon. J. Appl. Phys. 2016, 119, 135308. [Google Scholar] [CrossRef] [Green Version]
- Radu, I.; Szafraniak-Wiza, I.; Scholz, R.; Alexe, M.; Gösele, U. Low-temperature layer splitting of (100) GaAs by He+H coimplantation and direct wafer bonding. Appl. Phys. Lett. 2003, 82, 2413. [Google Scholar] [CrossRef]
- Qiang, S.; Ran, G.; Wei, Z.; Chao, Y.; Feng, Q.; Ning, L. Investigation of Surface Morphology of 6H-SiC Irradiated with He and H Ions. Materials 2018, 11, 282. [Google Scholar]
- Bai, Q.; Li, L.; Cheng, F.F.; Bin, R.; Fa, T.; Fu, E.; Yao, S.D. Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC. Nucl. Instrum. Methods Phys. Res. 2015, 365, 347–351. [Google Scholar] [CrossRef]
- Taguchi, T.; Igawa, N.; Miwa, S.; Wakai, E.; Jitsukawa, S.; Snead, L.L.; Hasegawa, A. Synergistic effects of implanted helium and hydrogen and the effect of irradiation temperature on the microstructure of SiC/SiC composites. J. Nucl. Mater. 2004, 335, 508–514. [Google Scholar] [CrossRef]
- Devanathan, R.; Weber, W.J. Displacement energy surface in 3C and 6H SiC. J. Nucl. Mater. 2000, 278, 258. [Google Scholar] [CrossRef]
- Li, B.S.; Zhang, C.H.; Zhang, H.H.; Shibayama, T.; Yang, Y.T. Study of damage produced in 5H-SiC by He irradiation. Vacuum 2011, 86, 452. [Google Scholar] [CrossRef]
- Sorieul, S.; Costantini, J.M.; Gosmain, L.; Thome, L.; Grob, J.J. Raman spectroscopy study of heavy-ion-irradiated α-SiC. J. Phys: Condens. Matter 2006, 18, 5235–5251. [Google Scholar] [CrossRef]
- Wang, Y.; Liao, Q.; Liu, M.; Zheng, P.F.; Gao, X.Y.; Jia, Z.; Xu, S.; Li, B.S. Optical spectroscopy study of damage evolution in 6H-SiC by H2+ implantation. Chin. Phys. B 2021, 30, 056106. [Google Scholar] [CrossRef]
- Li, B.S.; Wang, Z.G.; Zhang, C.H.; Wei, K.F.; Yao, C.F.; Sun, J.R.; Cui, M.H.; Li, Y.F.; Zhu, H.P.; Du, Y.Y.; et al. Evolution of strain and mechanical properties upon annealing in He-implanted 6H-SiC. J. Nucl. Mater. 2014, 455, 116. [Google Scholar] [CrossRef]
- Wang, P.F.; Huang, L.; Zhu, W.; Ruan, Y.F. Raman scattering of neutron irradiated 6H-SiC. Solid State Comm. 2012, 152, 887. [Google Scholar] [CrossRef]
- Gao, F.; Weber, W.J. Recovery of close Frenkel pairs produced by low energy recoils in SiC. J. Appl. Phys. 2003, 97, 4348. [Google Scholar] [CrossRef]
- Zinkle, S.J.; Snead, L.L. Opportunities and limitations for ion beams in radiation effects studies: Bridging critical gaps between charged particles and neutron irradiation. Scr. Mater. 2018, 143, 154. [Google Scholar] [CrossRef]
- Zhang, T.M.; He, X.X.; Chen, L.M.; Li, J.; Liao, Q.; Xu, S.; Zheng, P.F.; Li, B.S. The effect of cavities on recrystallization growth of high-fluence He implanted-SiC. Nucl. Instrum. Meth. Phys. Res. B 2021, 509, 68. [Google Scholar] [CrossRef]
- Lin, E.Z.; Niu, L.S.; Lin, E.Q.; Duan, Z. Effects of irradiation on the mechanical behavior of twined SiC nanowires. J. Appl. Phys. 2013, 113, 104309. [Google Scholar]
- Li, B.S.; Du, Y.Y.; Wang, Z.G. Recrystallization of He-ion implanted 6H-SiC upon annealing. Nucl. Instrum. Meth. Phys. Res. B 2015, 345, 53. [Google Scholar] [CrossRef]
- Liu, Y.Z.; Li, B.S.; Lin, H.; Zhang, L. Recrystallization phase in He-implanted 6H-SiC. Chin. Phys. Lett. 2017, 34, 076101. [Google Scholar] [CrossRef]
- Li, B.S.; Zhang, C.; Liu, H.P.; Xu, L.J.; Wang, X.; Yang, Z.; Ge, F.F.; Gao, W.; Shen, T.L. Microstructural and elemental evolution of polycrystalline α-SiC irradiated with ultra-high-fluence helium ions before and after annealing. Fusion Eng. Deg. 2020, 154, 111511. [Google Scholar] [CrossRef]
- Sun, J.J.; You, Y.W.; Xu, Y.C.; Wu, X.B.; Li, B.S.; Liu, C.S. Interaction of irradiation-induced point defects with transmutants (H, He, Li, Be, B, Mg, Al and P) in 3C-SiC ceramics. J. Euro. Ceram. Soc. 2020, 40, 5196. [Google Scholar] [CrossRef]
- Chen, J.; Jung, P.; Trinkaus, H. Microstructural evolution of helium-implanted α-SiC. Phys. Rev. B 2000, 61, 12923. [Google Scholar] [CrossRef] [Green Version]
- Kondo, S.; Katoh, Y.; Snead, L.L. Microstructural defects in SiC neutron irradiated at very high temperatures. J. Nucl. Mater. 2008, 382, 160. [Google Scholar] [CrossRef]
- Olivero, E.; Beaufort, M.F.; Barbot, J.F.; van Veen, A.; Fedorov, A.V. Helium implantation defects in SiC: A thermal helium desorption spectrometry investigation. J. Appl. Phys. 2003, 93, 231. [Google Scholar] [CrossRef]
- Zhao, S.Q.; Ran, G.; Li, F.B.; Deng, H.Q.; Gao, F. Ab initio study of interstitial helium clusters in 3C-SiC. J. Nucl. Mater. 2019, 521, 13. [Google Scholar] [CrossRef]
- Mitani, K.; Gosele, U.M. Formation of interface bubbles in bonded silicon wafers: A thermodynamic model. Appl. Phys. A 1992, 54, 543–552. [Google Scholar] [CrossRef]
- Wang, S.; He, H.Y.; Ding, R.; Chen, J.L.; Pan, B.C. Site preference and diffusion behaviors of H influenced by the implanted-He in 3C-β SiC. J. Alloy. Compd. 2018, 742, 226. [Google Scholar] [CrossRef]
- Was, G.S. Fundamentals of Radiation Materials Science; Springer: Berlin/Heidelberg, Germany, 2007; p. 58. [Google Scholar]
- Hochauer, T.; Misra, A.; Nastasi, M.; Mayer, J.W. Physical mechanisms behind the ion-cut in hydrogen implanted silicon. J. Appl. Phys. 2002, 92, 2335. [Google Scholar] [CrossRef]
- Ding, J.; Shang, Z.; Li, J.; Wang, H.; Zhang, X. Microstructure and tensile behavior of nanostructured gradient TWIP steel. Mater. Sci. Eng. A 2020, 785, 139346. [Google Scholar] [CrossRef]
- Li, B.S.; Daghbouj, N. Li, B.S. State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China. Unpublished data 2019.
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You, G.; Lin, H.; Qu, Y.; Hao, J.; You, S.; Li, B. Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions. Materials 2022, 15, 2941. https://doi.org/10.3390/ma15082941
You G, Lin H, Qu Y, Hao J, You S, Li B. Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions. Materials. 2022; 15(8):2941. https://doi.org/10.3390/ma15082941
Chicago/Turabian StyleYou, Guoqiang, Haipeng Lin, Yanfeng Qu, Jie Hao, Suyuan You, and Bingsheng Li. 2022. "Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions" Materials 15, no. 8: 2941. https://doi.org/10.3390/ma15082941