Wang, D.-H.; Ku, J.-Y.; Jung, D.-H.; Lee, K.-S.; Shin, W.C.; Yang, B.-D.; Park, J.-Y.
Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance. Materials 2022, 15, 1960.
https://doi.org/10.3390/ma15051960
AMA Style
Wang D-H, Ku J-Y, Jung D-H, Lee K-S, Shin WC, Yang B-D, Park J-Y.
Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance. Materials. 2022; 15(5):1960.
https://doi.org/10.3390/ma15051960
Chicago/Turabian Style
Wang, Dong-Hyun, Ja-Yun Ku, Dae-Han Jung, Khwang-Sun Lee, Woo Cheol Shin, Byung-Do Yang, and Jun-Young Park.
2022. "Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance" Materials 15, no. 5: 1960.
https://doi.org/10.3390/ma15051960
APA Style
Wang, D.-H., Ku, J.-Y., Jung, D.-H., Lee, K.-S., Shin, W. C., Yang, B.-D., & Park, J.-Y.
(2022). Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance. Materials, 15(5), 1960.
https://doi.org/10.3390/ma15051960