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Journal: Materials, 2022
Volume: 15
Number: 8230
Article:
Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress
Authors:
by
Juraj Marek, Jozef Kozarik, Michal Minarik, Aleš Chvála, Matej Matus, Martin Donoval, Lubica Stuchlikova and Martin Weis
Link:
https://www.mdpi.com/1996-1944/15/22/8230
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