Fan, J.; Zhou, C.; Bao, J.; Ji, H.; Gong, Y.; Zhou, W.; Lin, J.
The Effect of the Doping Amount on Electroelastic Coupled-Wave Scattering and Dynamic Stress Concentration around Defects in BNT Doped FN Materials. Materials 2022, 15, 5781.
https://doi.org/10.3390/ma15165781
AMA Style
Fan J, Zhou C, Bao J, Ji H, Gong Y, Zhou W, Lin J.
The Effect of the Doping Amount on Electroelastic Coupled-Wave Scattering and Dynamic Stress Concentration around Defects in BNT Doped FN Materials. Materials. 2022; 15(16):5781.
https://doi.org/10.3390/ma15165781
Chicago/Turabian Style
Fan, Jiawei, Chuanping Zhou, Junqi Bao, Huawei Ji, Yongping Gong, Weihua Zhou, and Jiang Lin.
2022. "The Effect of the Doping Amount on Electroelastic Coupled-Wave Scattering and Dynamic Stress Concentration around Defects in BNT Doped FN Materials" Materials 15, no. 16: 5781.
https://doi.org/10.3390/ma15165781
APA Style
Fan, J., Zhou, C., Bao, J., Ji, H., Gong, Y., Zhou, W., & Lin, J.
(2022). The Effect of the Doping Amount on Electroelastic Coupled-Wave Scattering and Dynamic Stress Concentration around Defects in BNT Doped FN Materials. Materials, 15(16), 5781.
https://doi.org/10.3390/ma15165781
