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Journal: Materials, 2022
Volume: 15
Number: 3768
Article:
Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System
Authors:
by
Botao Song, Bing Gao, Pengfei Han and Yue Yu
Link:
https://www.mdpi.com/1996-1944/15/11/3768
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