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Journal: Materials, 2022
Volume: 15
Number: 3503

Article: Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer
Authors: by Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Min-Hung Shih, Hsien-Chin Chiu, Hsuan-Ling Kao and Xinke Liu
Link: https://www.mdpi.com/1996-1944/15/10/3503

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