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Journal: Materials, 2022
Volume: 15
Number: 3503
Article:
Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer
Authors:
by
Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Min-Hung Shih, Hsien-Chin Chiu, Hsuan-Ling Kao and Xinke Liu
Link:
https://www.mdpi.com/1996-1944/15/10/3503
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