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Journal: Materials, 2021
Volume: 14
Number: 1534

Article: Performance Enhancement in N2 Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlOX Gate Dielectric with Γ-Shaped Gate Engineering
Authors: by Shun-Kai Yang, Soumen Mazumder, Zhan-Gao Wu and Yeong-Her Wang
Link: https://www.mdpi.com/1996-1944/14/6/1534

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