Dastgeer, G.; Afzal, A.M.; Aziz, J.; Hussain, S.; Jaffery, S.H.A.; Kim, D.-k.; Imran, M.; Assiri, M.A.
Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching. Materials 2021, 14, 7535.
https://doi.org/10.3390/ma14247535
AMA Style
Dastgeer G, Afzal AM, Aziz J, Hussain S, Jaffery SHA, Kim D-k, Imran M, Assiri MA.
Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching. Materials. 2021; 14(24):7535.
https://doi.org/10.3390/ma14247535
Chicago/Turabian Style
Dastgeer, Ghulam, Amir Muhammad Afzal, Jamal Aziz, Sajjad Hussain, Syed Hassan Abbas Jaffery, Deok-kee Kim, Muhammad Imran, and Mohammed Ali Assiri.
2021. "Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching" Materials 14, no. 24: 7535.
https://doi.org/10.3390/ma14247535
APA Style
Dastgeer, G., Afzal, A. M., Aziz, J., Hussain, S., Jaffery, S. H. A., Kim, D.-k., Imran, M., & Assiri, M. A.
(2021). Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching. Materials, 14(24), 7535.
https://doi.org/10.3390/ma14247535