Sobaszek, M.; Gnyba, M.; Kulesza, S.; Bramowicz, M.; Klimczuk, T.; Bogdanowicz, R.
Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition. Materials 2021, 14, 6328.
https://doi.org/10.3390/ma14216328
AMA Style
Sobaszek M, Gnyba M, Kulesza S, Bramowicz M, Klimczuk T, Bogdanowicz R.
Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition. Materials. 2021; 14(21):6328.
https://doi.org/10.3390/ma14216328
Chicago/Turabian Style
Sobaszek, Michał, Marcin Gnyba, Sławomir Kulesza, Mirosław Bramowicz, Tomasz Klimczuk, and Robert Bogdanowicz.
2021. "Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition" Materials 14, no. 21: 6328.
https://doi.org/10.3390/ma14216328
APA Style
Sobaszek, M., Gnyba, M., Kulesza, S., Bramowicz, M., Klimczuk, T., & Bogdanowicz, R.
(2021). Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition. Materials, 14(21), 6328.
https://doi.org/10.3390/ma14216328