Meng, Q.; Lin, Q.; Han, F.; Jing, W.; Wang, Y.; Jiang, Z.
A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor. Materials 2021, 14, 6193.
https://doi.org/10.3390/ma14206193
AMA Style
Meng Q, Lin Q, Han F, Jing W, Wang Y, Jiang Z.
A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor. Materials. 2021; 14(20):6193.
https://doi.org/10.3390/ma14206193
Chicago/Turabian Style
Meng, Qingzhi, Qijing Lin, Feng Han, Weixuan Jing, Yangtao Wang, and Zhuangde Jiang.
2021. "A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor" Materials 14, no. 20: 6193.
https://doi.org/10.3390/ma14206193
APA Style
Meng, Q., Lin, Q., Han, F., Jing, W., Wang, Y., & Jiang, Z.
(2021). A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor. Materials, 14(20), 6193.
https://doi.org/10.3390/ma14206193