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Journal: Materials, 2021
Volume: 14
Number: 3733

Article: Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD
Authors: by Jongwan Jung, Baegmo Son, Byungmin Kam, Yong Sang Joh, Woonyoung Jeong, Seongjae Cho, Won-Jun Lee and Sangjoon Park
Link: https://www.mdpi.com/1996-1944/14/13/3733

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