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Journal: Materials, 2021
Volume: 14
Number: 3733
Article:
Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD
Authors:
by
Jongwan Jung, Baegmo Son, Byungmin Kam, Yong Sang Joh, Woonyoung Jeong, Seongjae Cho, Won-Jun Lee and Sangjoon Park
Link:
https://www.mdpi.com/1996-1944/14/13/3733
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