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Journal: MaterialsVolume: 14Number: 3733
Article: Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD
  • Authors:
  • Jongwan Jung1,2,*,†,
  • Baegmo Son3,† and
  • Byungmin Kam3,†
  • et al.
Link: https://www.mdpi.com/1996-1944/14/13/3733

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