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Open AccessArticle

Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate

1
Faculty of Cryogenic Engineering, ITMO University, Saint-Petersburg 197101, Russia
2
Faculty of Physics, Department of General and Experimental Physics, Herzen State Pedagogical University of Russia, Saint Petersburg 191186, Russia
3
International Scientific and Research Institute of Bioengineering, ITMO University, Saint-Petersburg 197101, Russia
4
Saint Petersburg State University of Industrial Technologies and Design, Saint-Petersburg 191186, Russia
5
Terahertz Biomedicine Laboratory, ITMO University, Saint-Petersburg 197101, Russia
*
Author to whom correspondence should be addressed.
Materials 2020, 13(9), 2010; https://doi.org/10.3390/ma13092010
Received: 20 March 2020 / Revised: 20 April 2020 / Accepted: 22 April 2020 / Published: 25 April 2020
We report on the production of 200 and 600 nm thick Bi films on mica substrate with 10 nm thick Sb sublayer between Bi and mica. Two types of films have been studied: block and single crystal. Films were obtained using the thermal evaporation technique using continuous and discrete spraying. Discrete spraying allows smaller film blocks size: 2–6 μ m compared to 10–30 μ m, obtained by the continuous spraying. Single crystal films were made by the zone recrystallization method. Microscopic examination of Bi films with and without Sb sublayer did not reveal an essential distinction in crystal structure. A galvanomagnetic study shows that Sb sublayer results in the change of Bi films properties. Sb sublayer results in the increase of specific resistivity of block films and has no significant impact on single crystal films. For single-crystal films with Sb sublayer with a thickness of 200 nm the Hall coefficient has value 1.5 times higher than for the 600 nm thickness films at 77 K. The change of the Hall coefficient points to change of the contribution of carriers in the conductivity. This fact indicates a change in the energy band structure of the thin Bi film. The most significant impact of the Sb sublayer is on the magnetoresistance of single-crystal films at low temperatures. The increase of magnetoresistance points to the increase of mobility of the charge carriers. In case of detecting and sensing applications the increased carriers mobility can result in a faster device response time. View Full-Text
Keywords: thin film; bismuth; galvanomagnetic properties; resistance; relative magnetoresistance; hall coefficient thin film; bismuth; galvanomagnetic properties; resistance; relative magnetoresistance; hall coefficient
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MDPI and ACS Style

Makarova, E.S.; Tukmakova, A.S.; Novotelnova, A.V.; Komarov, V.A.; Gerega, V.A.; Kablukova, N.S.; Khodzitsky, M.K. Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate. Materials 2020, 13, 2010.

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