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Article

Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

1
Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, Kuala Lumpur 50603, Malaysia
2
Laser-Plasma Research Institute, Shahid Beheshti University, G.C., Evin, Tehran 19839, Iran
3
Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, Bangi 43600, Malaysia
4
Ibnu Sina Institute for Fundamental Science Studies (IIS), Universiti Technologi Malaysia, Skudai 81310, Johor, Malaysia
*
Author to whom correspondence should be addressed.
Materials 2019, 12(4), 674; https://doi.org/10.3390/ma12040674
Received: 14 January 2019 / Revised: 14 February 2019 / Accepted: 15 February 2019 / Published: 24 February 2019
This work demonstrated a growth of well-aligned NiSi/SiC core-shell nanowires by a one-step process of hot-wire chemical vapor deposition on Ni-coated crystal silicon substrates at different thicknesses. The NiSi nanoparticles (60 to 207 nm) acted as nano-templates to initially inducing the growth of these core-shell nanowires. These core-shell nanowires were structured by single crystalline NiSi and amorphous SiC as the cores and shells of the nanowires, respectively. It is proposed that the precipitation of the NiSi/SiC are followed according to the nucleation limited silicide reaction and the surface-migration respectively for these core-shell nanowires. The electrical performance of the grown NiSi/SiC core-shell nanowires was characterized by the conducting AFM and it is found that the measured conductivities of the nanowires were higher than the reported works that might be enhanced by SiC shell layer on NiSi nanowires. The high conductivity of NiSi/SiC core-shell nanowires could potentially improve the electrical performance of the nanowires-based devices for harsh environment applications such as field effect transistors, field emitters, space sensors, and electrochemical devices. View Full-Text
Keywords: core-shell nanowires; NiSi; SiC; nucleation limited silicide reaction; surface-migration; hot-wire chemical vapor deposition (HWCVD) core-shell nanowires; NiSi; SiC; nucleation limited silicide reaction; surface-migration; hot-wire chemical vapor deposition (HWCVD)
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MDPI and ACS Style

Alizadeh, M.; binti Hamzan, N.; Ooi, P.C.; bin Omar, M.F.; Dee, C.F.; Goh, B.T. Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition. Materials 2019, 12, 674. https://doi.org/10.3390/ma12040674

AMA Style

Alizadeh M, binti Hamzan N, Ooi PC, bin Omar MF, Dee CF, Goh BT. Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition. Materials. 2019; 12(4):674. https://doi.org/10.3390/ma12040674

Chicago/Turabian Style

Alizadeh, Mahdi, Najwa binti Hamzan, Poh C. Ooi, Muhammad F. bin Omar, Chang F. Dee, and Boon T. Goh 2019. "Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition" Materials 12, no. 4: 674. https://doi.org/10.3390/ma12040674

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