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Journal: Materials, 2019
Volume: 12
Number: 3917
Article:
Facile Process for Surface Passivation Using (NH4)2S for the InP MOS Capacitor with ALD Al2O3
Authors:
by
Jung Sub Lee, Tae Young Ahn and Daewon Kim
Link:
https://www.mdpi.com/1996-1944/12/23/3917
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