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Journal: Materials, 2019
Volume: 12
Number: 3149
3149
Article: Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors
Authors: by Sungju Choi, Jae-Young Kim, Hara Kang, Daehyun Ko, Jihyun Rhee, Sung-Jin Choi, Dong Myong Kim and Dae Hwan Kim
Link: https://www.mdpi.com/1996-1944/12/19/3149

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