Choi, S.; Kim, J.-Y.; Kang, H.; Ko, D.; Rhee, J.; Choi, S.-J.; Kim, D.M.; Kim, D.H.
Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors. Materials 2019, 12, 3149.
https://doi.org/10.3390/ma12193149
AMA Style
Choi S, Kim J-Y, Kang H, Ko D, Rhee J, Choi S-J, Kim DM, Kim DH.
Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors. Materials. 2019; 12(19):3149.
https://doi.org/10.3390/ma12193149
Chicago/Turabian Style
Choi, Sungju, Jae-Young Kim, Hara Kang, Daehyun Ko, Jihyun Rhee, Sung-Jin Choi, Dong Myong Kim, and Dae Hwan Kim.
2019. "Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors" Materials 12, no. 19: 3149.
https://doi.org/10.3390/ma12193149
APA Style
Choi, S., Kim, J.-Y., Kang, H., Ko, D., Rhee, J., Choi, S.-J., Kim, D. M., & Kim, D. H.
(2019). Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors. Materials, 12(19), 3149.
https://doi.org/10.3390/ma12193149