Sarzyński, M.; Grzanka, E.; Grzanka, S.; Targowski, G.; Czernecki, R.; Reszka, A.; Holy, V.; Nitta, S.; Liu, Z.; Amano, H.;
et al. Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes. Materials 2019, 12, 2583.
https://doi.org/10.3390/ma12162583
AMA Style
Sarzyński M, Grzanka E, Grzanka S, Targowski G, Czernecki R, Reszka A, Holy V, Nitta S, Liu Z, Amano H,
et al. Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes. Materials. 2019; 12(16):2583.
https://doi.org/10.3390/ma12162583
Chicago/Turabian Style
Sarzyński, Marcin, Ewa Grzanka, Szymon Grzanka, Grzegorz Targowski, Robert Czernecki, Anna Reszka, Vaclav Holy, Shugo Nitta, Zhibin Liu, Hiroshi Amano,
and et al. 2019. "Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes" Materials 12, no. 16: 2583.
https://doi.org/10.3390/ma12162583
APA Style
Sarzyński, M., Grzanka, E., Grzanka, S., Targowski, G., Czernecki, R., Reszka, A., Holy, V., Nitta, S., Liu, Z., Amano, H., & Leszczyński, M.
(2019). Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes. Materials, 12(16), 2583.
https://doi.org/10.3390/ma12162583